HomeNanotechnologyThermally-driven formation technique for rising (quantum) dots on sidewalls of self-catalysed skinny...

Thermally-driven formation technique for rising (quantum) dots on sidewalls of self-catalysed skinny nanowires

Embedding quantum dots (QDs) on nanowire (NW) sidewalls permits the mixing of multi-layers of QDs into the energetic area of radial p–i–n junctions to significantly improve mild emission/absorption. Nevertheless, the floor curvature makes the expansion way more difficult in contrast with growths on thin-films, notably on NWs with small diameters (Ø < 100 nm). Furthermore, the {110} sidewall sides of self-catalyzed NWs favor two-dimensional development, with the belief of three-dimensional Stranski–Krastanow development turning into extraordinarily difficult. Right here, we’ve got developed a novel thermally-driven QD development technique. The QD formation is pushed by the system vitality minimization when the pseudomorphic shell layer (manufactured from QD materials) is annealed below high-temperature, and thus with none restriction on the NW diameter or the participation of elastic pressure. It has demonstrated that the lattice-matched Ge dots may be grown defect-freely in a controllable means on the sidewall sides of the skinny (∼50 nm) self-catalyzed GaAs NWs with out utilizing any surfactant or floor remedy. This technique opens a brand new avenue to combine QDs on NWs, and might permit the formation of QDs in a wider vary of supplies techniques the place the expansion by conventional mechanisms will not be doable, with advantages for novel NWQD-based optoelectronic gadgets.

Graphical abstract: Thermally-driven formation method for growing (quantum) dots on sidewalls of self-catalysed thin nanowires



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